| PART |
Description |
Maker |
| M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AS6C62256A AS6C62256A-70PIN |
Common data inputs and data outputs
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor ...
|
| ST7FDALI ST7FDALIF2B6 ST7FDALIF2M6 ST7FLITE2 ST7FL |
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI (DATA BRIEFING)
|
ST Microelectronics
|
| HSP9501 |
Programmable Data Buffer(???绋??????插?)
Data Buffer, Programmable, 32MHz, Data Word to 10-Bits
|
Intersil Corporation
|
| AT-45DB081B 45DB081B |
AT-45DB081B DATA FLASH RELIABILITY DATA
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
